Lĩnh vực ứng dụng

SiC Laser-Annealing Equipment

Đặc điểm máy

1. Modular design with self‑developed advanced integrated laser technology

2. Highly uniform and stable spot‑energy distribution; compatible with 4‑inch, 6‑inch and 8‑inch thin‑sheet wafers

3. The annealed surface stays uniform and flat, with excellent electrical properties and surface‑morphology

4. Strict control of chamber oxygen content to effectively manage the quantity and distribution of carbon precipitation on the wafer‑surface

5. Equipped with a monitoring‑compensation system for optical‑energy stability and temperature detection on the non‑annealing side

6. Built‑in EFEM wafer‑transfer system. The equipment conforms to SEMI standards and supports SECS‑GEM communication


Lĩnh vực ứng dụng

Anneal the transition metal deposited on the heavily‑doped silicon‑carbide (SiC) surface to form favourable ohmic‑contact.


Ngành công nghiệp bán dẫn
Technical Data Sheet

Machine   Model

SiC   Laser-Annealing Equipment

Supported   Wafer Sizes

4inch、6inch、8inch

Thin‑Wafer   Annealing

Supported

Beam   Shaping

Top‑hat   Beam

Beam   Uniformity

>95%

Energy   Stability

≤1%

Specific‑Contact‑Resistivity

≤5×10^(-5)Ω.cm²

Surface   Temperature

Annealed‑side   >1500℃

Non‑annealed‑side ＜100 ℃

Chamber   Oxygen Content

N2/Ar：99.99%，<100ppm  @25s

Motion‑Stage   Accuracy

Straightness：±1μm

Repositioning   Accuracy：±1μm

Wafer‑Transfer   Mode

Automatic   Transferring

(compatible   with wafers or wafer carriers)


Sản phẩm đề xuất
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Hotline
Hotline bán hàng
+86-400-666-4000
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