

1. Position‑and‑speed‑controllable swing‑arm sprays chemical solutions for improved etching uniformity
2. Layer‑structured reaction chamber allows spraying of multiple chemical solutions inside the single chamber with efficient recovery of chemical solutions
3. Stack‑type layout for compact footprint; supporting up to four etching units
Etching process for compound semiconductors, power‑devices, MEMS components, advanced packaging and RF integrated‑circuits
Machine Model | Etching Machine ET12-XS2E2S1A |
Wafer Cassette Quantity | 2cs&2lp |
Configuration | 4 Etch Units |
Wafer Type | Round Wafers |
Wafer Size(mm) | 50-300 |
Throughput(WPH) | 90 |
Chemical Solution | H2O2、Strong Acids and Alkalis |
Substrate Material | Si、Glass、Sapphire、GaN、GaAs、SiC、LiTaO3、Li3PO4 |
Applicable Processes | Wet Etch |
Drying Mode | Spin Dry+N2 Dry |